Integrated Circuit Fabrication
Spring Quarter 2016
Room: SIG 225 (Sieg Hall)
Instructor: Scott Dunham
Office: EE 218
TA: Yu Jin
Office hours: F 4-5pm
Office: EE 253F
Office hours: TBA
This course is focused on understanding the foundations of micro and nanofabrication
as applied to silicon-based VLSI. Process simulation using
commercial TCAD tools will be used to illustrate and
explore the technology.
Target Audience: Undergraduate (486) and graduate (528) students
in EE and materials science, as well as students in chemical engineering, physics, mechanical
engineering, chemistry, etc. interested in Nano/Microtechology and/or
Course Description, EE/MSE 486: Processing physics, chemistry, and technology, including evaporation, sputtering, epitaxial growth, diffusion, ion implantation, laser annealing, oxidation, chemical vapor deposition, photoresists. Design considerations for bipolar and MOS devices, materials and process characterization. Future trends. Prerequisite: EE 331 or MSE 351. EE and MSE 486 offered jointly. 3 class. 3 cr.
EE/MSE 528: Graduate students in EE/MSE 528 will have supplemental reading, additional home work problems, additional lectures, and an added final project.
Primary Text: Silicon VLSI Technology, 2nd Edition, Plummer, Deal and Griffin
Prerequisite: EE 331 or MSE 351 or equivalent. Basic properties of semiconductors and doping, as well as structure and operation of pn junctions and MOSFETs.
Course Syllabus (PDF)
Online Discussion Board
Please use the class
GoPost Online Discussion Board for any questions about the class
(e.g., lectures, homework, grading, etc.).
- Homework #0 (due Monday, April 3) (PDF).
- Homework #0 Solutions (PDF).
- Homework #1 (due Monday, April 10) (PDF).
- Homework #1 Solutions (PDF).
- Homework #2 due M 4/17 (PDF).
- Homework #2 Solutions (PDF).
- Homework #3 due M 4/24 (PDF).
- Homework #3 Solutions (PDF).
- Homework #4 due M 5/1 (PDF).
- Homework #4 Solutions (PDF).
- Homework #5 due M 5/15 (PDF).
- Homework #6 due W 5/24 (PDF).
- Paper on Modeling of P "kink and tail" profiles:
``Modeling of Phosphorus Diffusion in Silicon,'' Scott T. Dunham,
J. Electrochem. Soc. 139, 2628 (1992).
[ PDF ]
- A review paper on dopant diffusion:
``Modeling of Dopant Diffusion in Silicon,'' Scott T. Dunham, Alp
H. Gencer and Srinivasan Chakravarthi, IEICE
Trans. Electron. E82C, 800 (1999). [invited]
[ PDF ]
TCAD Software info
Simulation Software (Sentaurus Process): The simulation software is
available on the EE Linux cluster. For information on how to access the cluster and the
software, visit the
EE CAD TA Wiki.
Do not print the manuals out. They are HUGE. You can make a copy to read on your
local machine. To begin, read Getting Started section of
To run, type "sprocess commandfile" (commandfile is the file with commands
telling simulator what to do). Before running, you will have to set up your environment
as described in wiki.
Here is an Example Input File.
If you are not familiar with Unix, you might want find an online Unix tutorial.
To use the Linux cluster requires and EE account. For MSE students, you should bring
an ID to EEB 307G and the staff there should be able to get you set up with an account.
The midterm will be held in class on May 3. You can bring in one sheet of notes (both sides OK) for reference.
Note that there were only 96 total points available on midterm,
so everyone will get 4 points added to their midterm score.
Mean was 50/96 (54/100).