EE/MSE528

Physics and Modeling of VLSI Fabrication

Spring Quarter 2007
MW 10:30am-12:20pm
Room: EEB 031 (Electrical Engineering Building)

Instructor: Scott Dunham


This course is focused on understanding CMOS nanotechnology at the current state-of-the-art and beyond, and will provide the physical background behind modern VLSI technology leading to an understanding of process interactions and process integration. Process simulation using commercial TCAD tools will be used extensively to illustrate and explore the technology. A project will be required along with a midterm, final and homeworks (which will also have simulation problems).

Target Audience: Graduate students and advanced undergraduates in EE, materials science, physics, chemical engineering, mechanical engineering, chemistry, etc. interested in Nano/Microtechology and/or VLSI CAD.

Course Description: Physics of VLSI fabrication technology, with emphasis on process modeling and simulation. CMOS process sequences, point defects and diffusion, ion implantation and annealing, film growth kinetics, deposition and etching, advanced photolithography techniques. Process interactions and process integration. Extensive use of process simulation software for both class examples and assignments. 4 class. 4 cr.

Text: Silicon VLSI Technology: Plummer, Deal and Griffin

Prerequisite: EE/MSE486 (Fundamentals of Integrated Circuit Technology) or EE/MSE 502 (Introduction to MEMS) or EE 527 (Solid State Laboratory Techniques) or equivalent exposure to basics of photolithography and diffusion/reaction problems, or consent of instructor.
Please read Chapters 1 and 2 before the first class meeting.