EE 531
Semiconductor Devices & Device Simulation
Physics and Modeling of Nanoscale VLSI Devices
Spring Quarter 2017
Tuesday and Thursday, 2:304:20pm
Room: MEB 234
Instructor: Scott Dunham
Office: EE 218
Phone: 5432189
Email: dunham@ee.washington.edu
Office hours: TBA
The course is aimed at understanding nanoscale semiconductor device
operation, emphasizing CMOS technology at the current stateoftheart
and beyond. The focus of the course is on submicron MOS devices and
what happens as these devices get smaller and faster. Device
simulation using commercial TCAD tools will be used extensively to
illustrate and explore device behavior. A simulation project will be
required along with a midterm, final and homeworks (which will also
have simulation problems).
Target Audience: Graduate students and advanced undergraduates
in electrical engineering, computer engineering and physics interested
in VLSI devices and circuits.
Course Description: Study of device phenomena in very small and
highspeed devices including effects of scaling, interfaces, and high
doping. Control of electrical characteristics (threshold voltage,
breakdown voltage, on/off currents, current gain, switching speed) in
small MOS structures. Extensive use of device simulation software. 4
class hours. 4 credits.
Texts:
"Fundamentals of Modern VLSI Devices, 2nd Edition" by Yuan Taur and Tak Ning, 2009
Prerequisites:
EE 482 (Semiconductor Devices) or equivalent
Online Discussion Board
Please use the class GoPost Online Discussion Board for any questions about the class (e.g., lectures, homework, grading, etc.).
Course Information (PDF)
Course Syllabus (PDF)
Announcements
Simulation Software (Sentaurus Device):
The simulation software is
available on the EE Linux cluster. For information on how to access the cluster and the software, visit the EE CAD TA Wiki: https://wiki.ee.washington.edu/index.php/Cad_TA. Do not print the manuals out. They are HUGE. You can make a copy to read on your local machine. To begin, read Getting Started section of SentaurusDevice Manual. To run, type "sdevice commandfile" (commandfile is the file with commands telling simulator what to do) in directory with example files (you make your own copy to edit).You will likely have to either use the full path name or add location of executable to your path. If you are not familiar with Unix, you might want find an online Unix tutorial.
Supplementary Reading (Reserve requested in ENG Library)
 "Fundamentals of Carrier Transport," by Mark Lundstrom, 2000.
 ``Advanced Semiconductor Fundamentals (Modular Series Vol. VI)'' by Pierret
 ``Semiconductor Physics and Devices'' by Neamen
 ``Device Electronics for Integrated Circuits'' by Muller and Kamins
 ``Modern Semiconductor Device Physics,'' edited by Sze
 ``Physics of Semiconductor Devices'' by Sze
 ``Advanced Theory of Semiconductor Devices'' by Hess
 ``Si Processing for the VLSI Era: Vol. 3The Submicron MOSFET'' by Wolf
 ``Advanced MOS Devices'' by Schroder
 ``Operation and Modeling of the MOS Transistor'' by Tsividis
Homework
Homework #1 (PDF)
Homework #1 Solutions (PDF)
Homework #2 (PDF)
Homework #2 Solutions (PDF)
Homework #3 (PDF)
Homework #3 Solutions (PDF)
Homework #4 (PDF)
Homework #4 Solutions (PDF)
Homework from previous offering
Homework #5 (PDF)
Homework #5 Solutions (PDF)
Homework #6 (PDF)
Homework #6 Solutions (PDF)
Homework #7 (PDF)
Homework #7 Solutions (PDF)
Handouts
Review of Semiconductor Device Equations (PDF)
Review of Quantum Mechanics (PDF)
Quantum Mechanics Basics from Pierret (PDF)
MOS Capacitor Basics (PDF)
Long Channel MOSFETs (PDF)
Notes on Linearized Drain Current Equation (PDF)
Fermi's Golden Rule from Lundstrom (PDF)
Nonstationary Device Modeling (PDF)
Carrier Scattering from Lundstrom (PDF)
WKB Approximation from Kroemer (PDF)
Lecture Notes from Purdue (Lundstrom) on Short Channel Effects (PDF)
Lecture Notes from Purdue (Lundstrom) on Velocity Saturation (PDF)
Lecture Notes from Purdue (Lundstrom) on Ballistic MOSFET (PDF)
Lecture Notes from Purdue (Lundstrom) on MOSFET Scattering Theory (PDF)
Lecture Notes from Purdue (Lundstrom) on Effective Mobility (PDF)
Lecture Notes from Purdue (Lundstrom) on VT Engineering (PDF)
Lecture Notes from Purdue (Lundstrom) on Series Resistance (PDF)
Lecture Notes from Purdue (Lundstrom) on MOSFET Leakage (PDF)
Lecture Notes from Purdue (Lundstrom) on Interconnect (PDF)
Lecture Notes from Purdue (Lundstrom) on Variability (PDF)
Lecture Notes from Purdue (Lundstrom) on CMOS Circuits (PDF)
Lecture Notes from Purdue (Lundstrom) on SOI Electrostatics (PDF)
Lecture Notes from Purdue (Lundstrom) on RF CMOS (PDF)
Lecture Notes from Purdue (Lundstrom) on Heterojunction FETs (PDF)
Constants and Parameters (PDF)
(Crude) Notes on Fully Depleted (Thin Body, Dual Gate, etc.) MOSFETs
(PDF) (Please send any
comments/corrections to GoPost.)

Notes from EE 482 (Prerequisite course)
Notes on
Semiconductor Devices in Equilibrium (PDF)
Notes on
Movement of Free Carriers (PDF)
Notes on
Semiconductor Devices in Nonequilibrium (PDF)
Notes on
PN Junctions (PDF)
Notes on
Metal Semiconductor Junctions (PDF)
Notes on
MOS Capacitors (PDF)
Notes on
MOS Transistors (PDF)
Notes on
Bipolar Junction Transistors (PDF)
Links
Exams
Exam 1 (PDF)
Previous Midterm (PDF)
Previous Midterm Solutions (PDF)
Exam 2 (PDF). 3rd problem was added.
Previous Final (PDF)
Previous Final Solutions (PDF)
Project
Example Project (PDF)
Example Project (PDF)
Example Project (PDF)
Example Project (PDF)