"Charge carrier induced lattice strain and stress effects on As activation in Si," Ahn, C.; Dunham, S.T., Applied Physics Letters, v 93, n 2, p 022112-1-3, 14 July 2008 [PDF]

"Dependence of resistivity on surface profile in nanoscale metal films and wires," Feldman, B.; Deng, R.; Dunham, S.T., Journal of Applied Physics, v 103, n 11, p 113715-1-4, 1 June 2008 [PDF]

"Calculations of codoping effects between combinations of donors (P/As/Sb) and acceptors (B/Ga/In) in Si" Chihak Ahn; Dunham, S.T., Journal of Applied Physics, v 102, n 12, p 123709-1-5, 15 Dec. 2007 [PDF]

"A compact hybrid silicon/electro-optic polymer resonant cavity modulator design," McLauchlan, K.K.; Dunham, S.T. Source: Proceedings of the SPIE - The International Society for Optical Engineering, v 6322, p 632203-1-9, 31 Aug. 2006 [PDF]

"Analysis of a compact modulator incorporating a hybrid silicon/electro-optic polymer waveguide," K.K. McLauchlan, S. T. Dunham, IEEE Journal of Selected Topics in Quantum Electronics, v 12, n 6, pt.2, Nov.-Dec. 2006, p 1455-60 [PDF]

"Accurate modeling of copper precipitation kinetics including Fermi level dependence," Hsiu-Wu Guo, S. T. Dunham, Applied Physics Letters, v 89, n 18, 30 Oct. 2006, p 182106-1-3.[PDF]

"First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities," C. Ahn, M. Diebel, S. T. Dunham, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v 24, n 2, March/April, 2006, p 700-704 [PDF]

"Diebel and Dunham reply," M. Diebel, S.T. Dunham, Physical Review Letters, v 96, n 3, 27 Jan. 2006, p 039602/1 [PDF]

``Calculations of effect of anisotropic stress/strain on dopant diffusion in
silicon under equilibrium and nonequilibrium conditions,"
Scott T. Dunham, Milan Diebel, Chihak Ahn, and Chen Luen Shih,
*J. Vac. Sci. Technol. B* **24**, 456 (2006).
[PDF]

``Interactions of B dopant atoms and Si interstitials with SiO2 films during
annealing for ultra-shallow junction formation,''
P. Kohli, A. Jain, S. Chakravarthi, H. Bu, S. T. Dunham, and S. K. Banerjee,
*Journal of Applied Physics* **97**, 73520 (2005).
[PDF]

``Ab initio calculations to model anomalous fluorine behavior,''
M. Diebel and S. T. Dunham, *Physical Review Letters*
**93**, 245901 (2004). [PDF]

``Fundamental characterization of the effect of nitride sidewall
spacer process on boron
dose loss in ultra-shallow junction formation,''
P. Kohli, S. Chakravarthi, A. Jain, H. Bu, M. Mehrotra, S. T. Dunham,
and S. K. Banerjee,
*Materials Science & Engineering B* **114**, 390 (2004).
[PDF]

``Molecular dynamics (MD) modeling for low-energy ion implantation process,''
Ohseob Kwon, Kidong Kim, Jihyun Seo, Taeyoung Won, and S. T. Dunham,
*Journal of the Korean Physical Society* **45**, 1327-31 (2004).

``Effect of nitride sidewall spacer process on boron dose loss in ultrashallow
junction formation,''
P. Kohli, A. Jain, H. Bu, S. Chakravarthi, C. Machala, S. T. Dunham,
and S. K. Banerjee,
*Journal of Vacuum Science & Technology B* **22**, 471 (2004).
[PDF]

``Atomistic simulations of the effect of Coulombic interactions on
carrier fluctuations in doped silicon,''
Z. Qin and S. T. Dunham, *Physical Review B*
**68**, 245201 (2003). [PDF]

``The process modeling hierarchy: connecting atomistic calculations to
nanoscale behavior,''
S. T. Dunham, P. Fastenko, Z. Qin, and M. Diebel, *IEICE Transactions
on Electronics*
**E86-C**, 276 (2003). [PDF]

``Theoretical studies of self-diffusion and dopant clustering in semiconductors,''
B. P. Uberuaga, G. Henkelman, H. Jonsson, S. T. Dunham, W. Windl, and R. Stumpf, *Phys. Stat. Solidi B *
**233**, 24 (2002). [PDF]

``A combined model for {311} defect and dislocation loop evolution: analytic formulation
of kinetic precipitation model,''
A. H. Gencer and S. T. Dunham, *J. Appl. Phys.* **91**, 2883 (2002).
[PDF]

``A simple continuum model for boron clustering based on atomistic calculations,''
S. Chakravarthi and S. T. Dunham, *J. Appl. Phys.* **89**, 3650 (2001). [PDF]

``Modeling Of Vacancy Cluster Formation In Ion Implanted Silicon,''
S. Chakravarthi and S. T. Dunham, *J. Appl. Phys.* **89**, 4758
(2001). [Postscript, PDF]

``Monte Carlo study of vacancy-mediated diffusion in silicon,''
M. M. Bunea and S. T. Dunham, *Phys. Rev. B* **61** (2000).

``Transition metal defect behavior and Si density of states in the
processing temperature regime,''A.L. Smith, S.T. Dunham,
L.C. Kimerling, *Physica B* **273-274**, 358 (1999).
[Paper (pdf)]
[Figure captions (pdf)]
[Figures (pdf)]

``First-Principles Study of Boron Diffusion
through Silicon,'' W. Windl, M.M. Bunea, R. Stumpf, S.T. Dunham, and
M.P. Masquelier, *Phys. Rev. Lett.* **83**, (1999).
[Postscript, PDF]

``Modeling of Dopant Diffusion in Silicon,'' Scott T. Dunham, Alp
H. Gencer and Srinivasan Chakravarthi, * IEICE
Trans. Electron.* ** E82C**, 800 (1999). [invited]
[ PDF ]

``Modeling of a GaN Based Static Induction Transistor,'' Gabriela
E. Bunea, Scott T. Dunham and Theodore M. Moustakas, * MRS Internet
Journal of Nitride Semiconductor Research* ** 4S1**, G6.41
(1999).

"Challenges in
Predictive Process Simulation," J. Dabrowski, H.-J. Mussig,
M. Duane, S. T. Dunham, R. Goossens, and H.-H. Vuong, *
Festk\"orp./Adv. in Sol. State Phys.* ** 38**, 565 (1999).

``Lattice Monte Carlo Simulations as Link Between Ab-Initio
Calculations and Macroscopic Behavior of Dopants and Defects in
Silicon,'' Marius Bunea and Scott T. Dunham, *Journal
of Computer-Aided Materials Design* **5**, 81 (1998). [invited]

``Effect of Film Density on Boron Diffusion in SiO$_2$,'' Mitra Navi
and Scott T. Dunham, *J. Appl. Phys. * **72**, 2111 (1998).

``Investigation of Boron Penetration through Thin Gate Dielectrics
including Role of Nitrogen and Fluorine,'' Mitra Navi and Scott
T. Dunham, *J. Electrochem. Soc.* **145**, 2545 (1998).

"Accurate and Efficient Modeling of
Nucleation and Growth Processes," Scott T. Dunham, Iuval Clejan,
and Alp H. Gencer, * Mat. Sci. Eng. A* **238**, 152 (1997).

"A Predictive Model for Transient Enhanced
Diffusion Based on Evolution of {311} Defects," Alp H. Gencer and
S.T. Dunham, * J. Appl. Phys.* **238**, 152 (1997).

"A Viscous Compressible
Model for Stress Generation/Relaxation in SiO2,"
Mitra Navi and S. T. Dunham, *J. Electrochem. Soc.*
**144**, 367 (1997).

"Oxidation of Silicon in TCA/O2 Ambients," Mitra Navi and S. T. Dunham, unpublished

"Moment Expansion Approach to Calculate Impact Ionization Rate in Submicron
Silicon Devices,"K. Sonoda, M. Yamaji, K. Taniguchi, and C. Hamaguchi,
S. T. Dunham, *J. Appl. Phys.* **80**, 5444 (1996).

"Reply to ``A Comment on `Atomistic Models of
Vacancy-Mediated Diffusion in Silicon,'''"
S.T. Dunham, *J. Appl. Phys.* **79(9)**, 7409 (1996).

"Impact ionization model using average energy and average square
energy of distribution function,"
K. Sonoda, S. T. Dunham, M. Yamaji, K. Taniguchi, and C. Hamaguchi,
*Jap. J. Appl. Phys. 1* **35**, 818 (1996).

"A Reduced Moment-Based Model for Precipitant Kinetics and
Application to Dopant Activation in Silicon,"
I. Clejan and S.T. Dunham, *J. Appl. Phys.* **78**, 7327 (1995).

"Consistent Quantitative Model for the Spatial Extent of Point Defect
Interactions in Silicon,"
A.M. Agarwal and S.T. Dunham, *J. Appl. Phys.* **78**, 5313 (1995).

"Atomistic Models of Vacancy-Mediated Dopant Diffusion in Silicon,"
S.T. Dunham and C.D. Wu., *J. Appl. Phys.* **78**, 2362 (1995).

"Modeling of the Kinetics of Dopant Precipitation in Silicon,"
S.T. Dunham, *J. Electrochem. Soc.* **142**, 2823 (1995).

"Diffusion of Phosphorus in Arsenic and Boron Doped Silicon,"
F. Wittel and S.T. Dunham, *Appl. Phys. Lett.* **66**,
1415 (1995).

"Improved Analysis of Spreading Resistance Measurements,"
S.T. Dunham, N. Collins and N. Jeng, *J. Vac. Soc. Tech. B* **12**,
283 (1994).

"Damage to Dose Ratio After Low Energy Silicon Ion Implantation into
Crystalline Silicon,"
Y. Levin, N Herbots and S.T. Dunham, *J. Mat. Res.* **8**, 2305
(1993).

"Determination of Silicon Point Defect Properties from Oxidation Enhanced
Diffusion of Buried Layers," A.M. Agarwal and S.T. Dunham, *Appl. Phys. Lett.* **63**, 800 (1993).

"Growth Kinetics of Disc-Shaped Extended Defects with Constant
Thickness,"
S.T. Dunham, *Appl. Phys. Lett.* **63**, 464 (1993).

"Defect Formation during Anealing of Thin Silicon Oxide Films in Argon,"
A. Agarwal and S.T. Dunham, *J. Electrochem. Soc.* **140**, 222
(1993).

"A Quantitative Model for the Coupled Diffusion of Phosphorus and Point
Defects in Silicon,"
S.T. Dunham, *J. Electrochem. Soc.* **139**, 2628 (1992).

"Interstitial Supersaturation during Oxidation of Silicon in
Steam Ambients,"
N. Jeng and S.T. Dunham, *J. Appl. Phys.* **72**, 2049 (1992).

"Interactions of Silicon Point Defects with Silicon Oxide Films,"
S.T. Dunham, *J. Appl. Phys.* **71**, 685 (1992).

"Dopant Diffusion during High-Temperature Oxidation of Silicon,"
S.T. Dunham and N. Jeng, *Appl. Phys. Lett.*
**59**, 2016 (1991).

"Interstitial Kinetics near Oxidizing Silicon Interfaces,"
S.T. Dunham, *J. Electrochem. Soc.***136**, 250 (1989).

"Analysis of the Effect of Thermal Nitridation of Silicon
on Silicon Interstitial Concentration,"
S.T. Dunham and J.D. Plummer, *J. Appl. Phys.*
**62**, 1195 (1987).

"Point Defect Generation during the Oxidation of Silicon
in Dry Oxygen. I Theory,"
S.T. Dunham and J.D. Plummer, *J. Appl. Phys.*
**57**, 2541 (1986).

"Point Defect Generation during the Oxidation of Silicon
in Dry Oxygen. II.
Comparison to Experiment,"
S.T. Dunham and J.D. Plummer, *J. Appl. Phys.*
**57**, 2551 (1986).

"Atomistic modeling of dopant diffusion and segregation in strained SiGeC," Dunham, S.T.; Hsiu-Wu Guo; Jakyoung Song; Chihak Ahn, 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), p 333-6, 2008.

"Stress effects on as activation in Si," Arm, C.; Dunham, S.T., Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, p 275-9, April 2007

"Modeling of Cu surface precipitation and out-diffusion from silicon wafers," Hsiu-Wu Guo; Dunham, S.T., Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II, p 239-44, April 2007

"Modeling of Defect Evolution and TED under Stress based on DFT Calculations,'' H-W. Guo, S.T. Dunham, C-L. Shih, and C. Ahn, SISPAD 2006, September 2006.

"Predictive Models for Co-doping Effects Between Combinations of Donors (P/As/Sb) and Acceptors (B/Ga/In),'' C. Ahn and S.T. Dunham, SISPAD 2006, September 2006.

``Segregation and Diffusion of B in Strained SiGe: Comparison of Theoretical Calculations to Experimental Results,'' Scott T. Dunham, Chihak Ahn, Jakyoung Song, and Jason Guo, E-MRS06, European Materials Research Society Meeting, May 2006.

"A compact hybrid silicon/electro-optic polymer resonant cavity modulator design," K. Kleven McLauchlan, S. T. Dunham, Proceedings of SPIE - The International Society for Optical Engineering, v 6322, Tuning the Optic Response of Photonic Bandgap Structures III, 2006, p 632203. [PDF]

``Predictive Models for B Diffusion in Strained SiGe based on atomistic calculations,'' Chihak Ahn, Jakyoung Song, Scott T. Dunham, Materials Research Society Symposium Proceedings, vol. {\bf 913}, {\bf Transistor Scaling-Methods, Materials and Modeling}, p 179-183, April 2006.

``Low temperature poly-Si sputter deposition through metal-induced crystallization and its application, H.-W. Guo, C.-L. Shih, J. R. Ketterl, L.V. Saraf, D. E. McCready, M. H. Engelhard, S. T. Dunham, Materials Research Society Meeting, April 2006.

``Atomistic Modeling of Boron Activation and Diffusion in Strained SiGe,'' Scott T. Dunham, Jakyoung Song, and Chihak Ahn, ENS05 European Nanosystems, December 2005.

"Predictive models for activation and diffusion of B in strained SiGe," J. Song, C. Ahn, and S. T. Dunham, Semiconductor Research Corporation (SRC) TECHCON05, October 2005.

``Stress Dependence of As Diffusivity, C. Ahn and S. T. Dunham, Semiconductor Research Corporation (SRC) TECHCON05, October 2005.

``Accurate Modeling of {311} Defect Evolution,'' C.-L. Shih, C. Ahn, H.-W. Guo and S. T. Dunham, Semiconductor Research Corporation (SRC) TECHCONâ€™05, October 2005.

"Design and simulation of a hybrid silicon/electro-optic polymer modulator," K. Kleven and S. T. Dunham, NUSOD'05 -- Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, p 49-50. [PDF]

"Predictive model for B diffusion in strained SiGe based on atomistic calculations," C. Ahn, J. Song, S. T. Dunham, Materials Research Society Symposium Proceedings, v 913, Transistor Scaling-Methods, Materials and Modeling, 2006, p 179-183.

"Analysis of surface roughness scattering and its contribution to conductivity degradation in nanoscale interconnects," R. Deng and S. Dunham, Proceedings of the IEEE 2005 International Interconnect Technology Conference -- IITC'05, p 147-9. [PDF]

"Ab-initio calculations to predict stress effects on boron solubility in silicon," M. Diebel, S. T. Dunham, Simulation of Semiconductor Processes and Devices - SISPAD 2004, 2004, p 37-40. [PDF]

"Accurate modeling of copper precipitation kinetics including fermi level dependence," H.-W. Guo, S. T. Dunham, Electrochemical Society Proceedings, v 5, High Purity Silicon VIII - Proceedings of the International Symposium, 2004, p 165-175

"Process modeling based on atomistic understanding for state of the art CMOS device design," S. Chakravarthi, M. Diebel, P. R. Chidambaram, S. Ekbote, S. T. Dunham, C. F. Machala, S. Johnson, 2003 Nanotechnology Conference and Trade Show. Nanotech 2003. Nanotech 2003 Joint Meeting. 6th International Conference on Modeling and Simulation of Microsystems, MSM 2003. 3rd International Conference on Computational Nanoscience and Technology, ICCN 2003. 2003 Workshop on Compact Modeling, WCM 2003, 2003, pt. 2, p 121-4 vol.2

"Investigation and modeling of fluorine co-implantation effects on dopant redistribution," M. Diebel, S. Chakravarthi, S.T. Dunham, C.F. Machala, S. Ekbote, and A. Jain, CMOS Front-End Materials and Process Technology (Mater. Res. Soc. Symposium Proceedings Vol. 765), 2003, p 211-16. [PDF]

"Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon," Z. Qin and S. T. Dunham, CMOS Front-End Materials and Process Technology (Mater. Res. Soc. Symposium Proceedings Vol. 765), 2003, p 173-8. [PDF]

"Ab-initio calculations to predict stress effects on defects and diffusion in silicon," M. Diebel and S. T. Dunham, Simulation of Semiconductor Processes and Devices - SISPAD 2003, p 147-50. [PDF]

"The process modeling hierarchy: connecting atomistic calculations to nanoscale behavior," S. T. Dunham, Simulation of Semiconductor Processes and Devices - SISPAD 2002, p 213-16. [PDF]

"Modeling Fermi Level Effects in Atomistic Simulations," Z. Qin and S. T. Dunham, Silicon Front-End Junction Formation Technologies (Mater. Res. Soc. Symposium Proceedings Vol. 717), Editors: Daniel F. Downey, Mark E. Law, Alain Claverie, Michael J. Rendon, 2002, p C3.8.1-6. [PDF]

" Ab-Initio Calculations To Model Anomalous Fluorine Behavior," Milan Diebel and S. T. Dunham, Silicon Front-End Junction Formation Technologies (Mater. Res. Soc. Symposium Proceedings Vol. 717), Editors: Daniel F. Downey, Mark E. Law, Alain Claverie, Michael J. Rendon, 2002, p C4.5.1-6. [PDF]

"Modeling of annealing of high concentration arsenic profiles," P. Fastenko, S. T. Dunham, and G. Henkelman Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III (Mater. Res. Soc. Symposium Proceedings Vol. 669), eds. K. S. Jones, M. D. Giles, P. Stolk, J. Matsuo, E. C. Jones, 2001, p J5.10.1-6. [PDF]

"Modeling of boron deactivation/activation kinetics during ion implant annealing," S. Chakravarthi and S.T. Dunham, Simulation of Semiconductor Processes and Devices -- SISPAD 2000, p 167-70. [ PDF ]

"Modeling of initial stages of annealing for amorphizing arsenic implants," P. Fastenko, B. Murphy and S.T. Dunham, Simulation of Semiconductor Processes and Devices -- SISPAD 2000, p 171-4. [ PDF ]

"Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation", S. Chakravarthi, A.H. Gencer, S.T. Dunham and D.F. Downey, Si Front-End Processing Physics and Technology of Dopant-Defect Interactions II, Mater. Res. Soc. Spring 2000 [ PDF ]

"Modeling Of Vacancy Cluster Formation in Ion Implanted Silicon", S. Chakravarthi and S. T. Dunham, in Fifth Intl. Symp. On Process Phys. and Modeling in Semiconductor Device Manufacturing, Electrochemical Society Meeting, Seattle, May 1999. [PDF]

"Beyond TED: Understanding B Shallow Junction Formation", Scott T. Dunham, Srinivasan Chakravarthi and Alp H. Gencer, ( IEDM Technical Digest 1998). [PDF]

"A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations", Srinivasan Chakravarthi and Scott T. Dunham, SISPAD 1998 Technical Digest. [PDF]

"Modeling Of Implantation Induced Transient Enhanced Diffusion Of Boron", Srinivasan Chakravarthi and Scott T. Dunham, TECHCON '98 (Sept 1998). [PDF]

"Influence Of Extended Defect Models On Prediction Of Boron Transient Enhanced Diffusion", Srinivasan Chakravarthi and Scott T. Dunham, (Mat. Res. Soc., Spring 1998). [PDF]

"Fundamental Modeling of
Transient Enhanced Diffusion through Extended Defect Evolution,"
Alp. H. Gencer, Srinivasan Chakravarthi, Iuval Clejan and Scott
T. Dunham, in **Defects and Diffusion in Silicon Processing**, S.
Coffa, T. de la Rubia, C. Rafferty, and P. Stolk, eds. (Mat. Res. Soc.
Proc., Pittsburgh, PA, 1997). [Postscript] [PDF]

"Physical Modeling of Transient Enhanced Diffusion and Dopant Deactivation via Extended Defect Evolution", A.H. Gencer, S. Chakravarthi and S.T. Dunham, 1997 International Conference on Simulation of Semiconductor Process and Devices, SISPAD'97 Technical Digest, (IEEE, Piscataway, NJ, 1997). [PDF]

"Interactions of fluorine redistribution and nitrogen incorporation with boron diffusion in silicon dioxide," M. Navi and S. T. Dunham, 1997 International Conference on Simulation of Semiconductor Process and Devices, SISPAD'97 Technical Digest, p. 335-8. [PDF]

``Linking of Atomistic Modeling to Macroscopic Behavior for Front End
Processes,'' Scott T. Dunham, in **Modeling and Simulation of
Microsystems (MSM'99)** (Computational Publications, Cambridge, MA, 1999)
pp. 355-358. [Postscript, PDF]

"Point Defect Properties from Metal
Diffusion Experiments -- What Does the Data Really Tell Us?,"
Srinivasan Chakravarthi and Scott T. Dunham, in **Defects and
Diffusion in Silicon Processing**, S. Coffa, T. de la Rubia,
C. Rafferty, and P. Stolk, eds. (Mat. Res. Soc. Proc., Pittsburgh,
PA, 1997)

"Lattice Monte Carlo Simulations of Vacancy-Mediated Diffusion and
Aggregation using Ab-Initio Parameters," Marius Bunea and Scott
T. Dunham, in **Defects and Diffusion in Silicon Processing**,
S. Coffa, T. de la Rubia, C. Rafferty, and P. Stolk, eds. (Mat. Res.
Soc. Proc., Pittsburgh, PA, 1997)

"Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion
in Silicon for Amorphizing Implants," Alp. H. Gencer and Scott
T. Dunham, in **Microstructure Evolution During Irradiation**,
T. de la Rubia, L. Hobbs, I. Robertson, and G. Was, eds. (Mat. Res.
Soc. Proc., Pittsburgh, PA, 1997); also in **Materials Modification
and Synthesis by Ion Beam Processing**, D. Alexander, N. Cheung,
B. Park and W. Skorupa, eds. (Mat. Res. Soc. Proc., Pittsburgh, PA,
1997)

"Accurate and Efficient Modeling of
Nucleation and Growth Processes," Scott T. Dunham, Iuval Clejan,
and Alp H. Gencer, in **Microstructural Evolution in Bulk Phases**,
W. Johnson, S. Marsh, J. Sekhar, and H. Wang, eds., *
Mat. Sci. Eng. A* (1997).

"Modeling of Transient
Enhanced Diffusion Based on Evolution of {311} Defects," Alp
H. Gencer and S.T. Dunham, in ** Process Physics and Modeling in
Semiconductor Technology**, G.R. Srinivasan, C.S. Murthy and
S.T. Dunham, eds., (Electrochem. Soc. Proc., Pennington, NJ 1996)
pp. 155-163.

"Modeling of SiO2 Stress Relaxation and Stress Dependent Oxidation,"
Mitra Navi and S.T. Dunham, in ** Process Physics
and Modeling in Semiconductor Technology**, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996)pp. 417-425.

"Interactions of Point Defects with Boron and Arsenic Precipitates,"
I. Clejan and S.T. Dunham, in ** Process Physics
and Modeling in Semiconductor Technology**, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996) pp. 398-406.

"Models and Parameters for the Coupled Difusion of Dopants and
Point Defects in Silicon,"
S.T. Dunham and F.P. Wittel, in ** Process Physics
and Modeling in Semiconductor Technology**, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996) pp. 27-36.

"Two Stream Model for Dopant Diffusion in Polysilicon Incorporating
Effects of Grain Growth,"
S. Banerjee and S.T. Dunham, in ** Process Physics
and Modeling in Semiconductor Technology**, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996) pp. 92-100.

"Normal and Transient-Enhanced Diffusion of Boron as a Function of Background Doping Level," F.P. Wittel and S.T. Dunham, unpublished.

"Lattice Monte-Carlo Simulations of
Vacancy-Mediated Diffusion and Implications for Continuum Models of
Coupled Diffusion," S.T. Dunham and C.D. Wu, in
**Simulation of Semiconductor Devices and Processes
(SISDEP/SISPAD'95)**, H. Ryssel, ed.

"Spatial Variations in Point Defect
Concentrations and Their Impact on Submicron Device Structures,"
S.T. Dunham and A.M. Agarwal, in **ULSI Science and Technology**,
E.M. Middlesworth and H.Z. Massoud, eds. (Electrochem. Soc. Proc.,
Pennington, NJ, 1995).

"Erbium in Silicon: a Defect System for Optoelectronic Integrated
Circuits," J. Michel, J. Palm, F. Gan, F.Y.G. Ren, B. Zheng,
S.T. Dunham, and L.C. Kimerling, in **Proceedings of 18th
International Conference on Defects in Semiconductors (ICDS-18),**
Mater. Sci. Forum Vol. 196-201, pt.2, pp. 585-90 (1995).

"Computationally Efficient Model for Dopant
Precipitation Kinetics," I. Clejan and S.T. Dunham, in **ULSI
Science and Technology**, E.M. Middlesworth and H.Z. Massoud,
eds. (Electrochem. Soc. Proc., Pennington, NJ, 1995).

"Er-O and Er-F Reactions in Silicon" F.Y.G. Ren, S.T. Dunham,
J. Michels, B. Zheng, L. Giovane, L.C. Kimerling, in **Proceeding of
the 36th Electronic Materials Conference**(TMS, Warrendale, PA,
1994).

"Atomistic Models of Vacancy-Mediated
Dopant Diffusion in Silicon at High Doping Levels,"
S.T. Dunham and C.D. Wu, in **NUPAD '94**(IEEE, Piscataway, NJ, 1994)
pp. 101-104.

"Kinetics of Dopant Precipitation in Silicon,"
S.T. Dunham, in **Silicon Materials Science & Technology** H. Huff,
W. Bergholz, and K. Sumino, eds.(Electrochem. Soc. Proc., Pennington,
NJ 1994) pp 711-719.

"Modeling of Dopant Diffusion during Annealing of Sub-Amorphizing
Implants,"
S.T. Dunham, in **Materials Synthesis and Processing Using Ion Beams**,
R.J. Culbertson, O.W. Holland, K.S. Jones, and K Maex, eds.
(Mat. Res. Soc. Proc., Pittsburgh, PA, 1994), pp. 197-204.
[ PDF ]
[ Postscript ]

"Consistent Quantitative Models for the Coupled Diffusion of Dopants and
Point Defects in Silicon,"
S.T. Dunham, in **1993 International Workshop on VLSI Process and
Device Modeling (VPAD 1993)**, K. Asada, ed (Japan, 1993) pp. 46-49.

"Improved Analysis of Spreading Resistance Measurements"
S.T. Dunham, N. Collins, and N. Jeng, in **Measurement and
Characterization of Ultra-Shallow Doping Profiles in Semiconductors**,
R. Subrahmanyan, C. Osburn, and P. Rai-Choudhury, eds. (MCNC, Research
Triangle Park, NC, 1993) pp. 44-53.

"Models for the Physical Extent of Point Defect Interactions in Silicon,"
A.M. Agarwal and S.T. Dunham, in **Process Physics and Modeling in
Semiconductor Technology**, G.R. Srinivasan, K. Taniguchi, and
C.S. Murthy, eds. (Electrochem. Soc. Proc. **93-6**, Pennington, NJ,
1993) pp. 149-158.

"Dopant Diffusion in Polysilicon,"
M. Matsuoka and S.T. Dunham, in **Process Physics and
Modeling Semiconductor Technology**,G.R. Srinivasan, K. Taniguchi, and
C.S. Murthy, eds. (Electrochem. Soc. Proc. **93-6**, Pennington, NJ,
1993) pp. 88-97

"Modeling of Phosphorus Diffusion in Silicon,"
S.T. Dunham, in **Process Physics and Modeling Semiconductor Technology**
G.R. Srinivasan, K. Taniguchi, and C.S. Murthy, eds.
(Electrochem. Soc. Proc. **93-6**, Pennington, NJ, 1993) pp. 88-97

"Modeling of the Coupled Diffusion of Phosphoruswith Point Defects,"
S.T. Dunham, in **Role of Point Defects/Defect Complexes in Silicon
Device Fabrication** B. Sapori, ed. (NREL, 1992).

"Damage of Si-Crystal during Implantation by Low Energy Ions,"
Y. Levin, N. Herbots, and S.T. Dunham in **Defect Engineering in
Semiconductor Growth, Processing and Device Technology**, S. Ashok,
J. Chevakkier, K. Sumino, and E.R. Weber, eds. (Mat. Res. Soc. Proc.,
Pittsburgh, PA 1992), pp. 1037-42.

"Determination of Silicon Point Defect Properties using Buried Layers
and Membranes,"
S.T. Dunham, A. Agarwal, and N. Jeng, in **Process Physics and
Modeling Semiconductor Technology**, G.R. Srinivasan, J. Plummer,
and S. Pantelides eds. (Electrochem. Soc. Proc. **91-4**, Pennington,
NJ, 1990) pp. 516-528.

"Point Defect Models forHigh Concentration Phosphorus Diffusion,"
S.T. Dunham, and R.A. Meade, in **Process Physics and Modeling Semiconductor
Technology**, G.R. Srinivasan, J. Plummer, and S. Pantelides
eds. (Electrochem. Soc. Proc. **91-4**, Pennington, NJ, 1990) pp. 287-303.

"Measurements of Enhanced Diffusion of Buried Layers in Silicon Membranes
during Oxidation,"
S.T. Dunham, A.M. Agarwal, and N. Jeng, in **Impurities, Defects and
Diffusion in
Semiconductors**, J. Bernholc, E.E. Haller, and D.J. Wolford, eds.
(Mater. Res. Soc.
Proc. **163**, Pittsburgh, PA, 1990) pp. 543-548.

"Behavior of Interstitials Near Non-Oxidizing Si-SiO2 Interfaces,"
S.T. Dunham, in **Ultra Large Scale Integration Science and Technology**,
C.M. Osburn and J. Andrews, eds. (Electrochem. Soc. Proc. **89-9**,
Pennington, NJ, 1989).

"Interstitial Fluxes during Silicon Oxidation,"
S.T. Dunham, in **Physics and Chemistry of SiO2 and Si-SiO2 Interface**,
C.R. Helms and B.E. Deal eds. (Plenum, New York, NY 1988) pp. 477-484.

"The Effects of the Interface Roughness on Ellipsometric Measurements
of Thin Oxides,"
S.T. Dunham and B. Agrawal, in **SiO2 and Its Interfaces**,
G. Lucovsky and S. Pantelides, eds. (Mater. Res. Soc. Proc. **105**,
Pittsburgh, PA 1988) pp 301-305.

"Modeling and
Simulation of Arsenic Activation and Diffusion in Silicon", Pavel
Fastenko, **Ph.D. Thesis**, University of Washington (2002). [ PDF ] [Postscript]

"Physics and Modeling
of Ion Implantation Induced Transient Enhanced Deactivation and
Diffusion Processes In Boron Doped Silicon", Srinivasan Chakravarthi,
**Ph.D. Thesis**, Boston University (2000). [ PDF ] [Postscript]

"Kinetic Lattice Monte Carlo and Ab Initio Study of Point Defect Mediated Diffusion of Dopants in Silicon," Marius Bunea, PhD Thesis, Boston University 2000 [Postscript] [PDF]

"Modeling and Simulation of Transient Enhanced Diffusion Based on Interactions of Point and Extended Defects," Alp Gencer, PhD Thesis, Boston University 1999 [Postscript] [PDF]

"Modeling Dose Loss at the Silicon-Silicon Dioxide Interface," Brendon Murphy, Masters Thesis, Boston University 1998 [Postscript] [PDF]

"Density Relaxation and Impurity Incorporation in Thin Silicon Dioxide Films and Their Effects on Boron Diffusion," Dr. Mitra Navi, Ph.D. Thesis, Boston University 1998

"Modeling of Dopant Diffusion in Polysilicon Incorporating Effects of Grain Boundary Motion," Soumya Banerjee, Masters Thesis, Boston University 1996

"Development and Characterization of Process Simulation Models for Diffusion and Co-Diffusion of Dopants in Silicon," Dr. Frederick P. Wittel, Ph.D. Thesis, Boston University 1995

"The Spatial Extent of Point Defects in Silicon: Experiments and Modeling," Dr. Anuradha M. Agarwal, Ph.D. Thesis, Boston University 1994

"Monte Carlo Lattice Simulations of Vacancy-Mediated Diffusion in Silicon," Can-Dong Wu, Masters Thesis, Boston University 1994

"Studies of Nucleation for the Freezing Transition in Models of Simple Fluids," Dr. Iuval Clejan, Ph.D. Thesis, Boston University

"Oxidation of Silicon in Chlorine Containing Ambients," Mitra Navi, Masters Thesis, Boston University 1993

"Point Defect Generation during Oxidation of Silicon in Dry Oxygen," Scott T. Dunham, Ph.D. Thesis, Stanford University, 1985