Boston University Process Modeling Group
Papers and Publications
"A
Predictive Model for Transient Enhanced Diffusion Based on Evolution
of {311} Defects". Alp H. Gencer and S.T. Dunham, submitted to
J. Appl. Phys. .
"Reply to ``A Comment on `Atomistic Models of
Vacancy-Mediated Diffusion in Silicon,'''"
S.T. Dunham, J. Appl. Phys. 79(9), 7409 (1996).
"Impact ionization model using average energy and average square
energy of distribution function,"
K. Sonoda, S. T. Dunham, M. Yamaji, K. Taniguchi, and C. Hamaguchi,
Jap. J. Appl. Phys. 1 35, 818 (1996).
"A Reduced Moment-Based Model for Precipitant Kinetics and
Application to Dopant Activation in Silicon,"
I. Clejan and S.T. Dunham, J. Appl. Phys. 78, 7327 (1995).
"Consistent Quantitative Model for the Spatial Extent of Point Defect
Interactions in Silicon,"
A.M. Agarwal and S.T. Dunham, J. Appl. Phys. 78, 5313 (1995).
"Atomistic Models of Vacancy-Mediated Dopant Diffusion in Silicon,"
S.T. Dunham and C.D. Wu., J. Appl. Phys. 78, 2362 (1995).
"Modeling of the Kinetics of Dopant Precipitation in Silicon,"
S.T. Dunham, J. Electrochem. Soc. 142, 2823 (1995).
"Diffusion of Phosphorus in Arsenic and Boron Doped Silicon,"
F. Wittel and S.T. Dunham, Appl. Phys. Lett. 66,
1415 (1995).
"Improved Analysis of Spreading Resistance Measurements,"
S.T. Dunham, N. Collins and N. Jeng, J. Vac. Soc. 12,
283 (1994).
"Damage to Dose Ratio After Low Energy Silicon Ion Implantation into
Crystalline Silicon,"
Y. Levin, N Herbots and S.T. Dunham, J. Mat. Res. 8, 2305
(1993).
"Determination of Silicon Point Defect Properties from Oxidation Enhanced
Diffusion of Buried Layers,"
A.M. Agarwal and S.T. Dunham, Appl. Phys. Lett. 63, 800 (1993).
"Growth Kinetics of Disc-Shaped Extended Defects with Constant
Thickness,"
S.T. Dunham, Appl. Phys. Lett. 63, 464 (1993).
"Defect Formation during Anealing of Thin Silicon Oxide Films in Argon,"
A. Agarwal and S.T. Dunham, J. Electrochem. Soc. 140, 222
(1993).
"A Quantitative Model for the Coupled Diffusion of Phosphorus and Point
Defects in Silicon,"
S.T. Dunham, J. Electrochem. Soc. 139, 2628 (1992).
"Interstitial Supersaturation during Oxidation of Silicon in
Steam Ambients,"
N. Jeng and S.T. Dunham, J. Appl. Phys. 72, 2049 (1992).
"Interactions of Silicon Point Defects with Silicon Oxide Films,"
S.T. Dunham, J. Appl. Phys. 71, 685 (1992).
"Dopant Diffusion during High-Temperature Oxidation of Silicon,"
S.T. Dunham and N. Jeng, Appl. Phys. Lett.
59, 2016 (1991).
"Interstitial Kinetics near Oxidizing Silicon Interfaces,"
S.T. Dunham, J. Electrochem. Soc.136, 250 (1989).
"Analysis of the Effect of Thermal Nitridation of Silicon
on Silicon Interstitial Concentration,"
S.T. Dunham and J.D. Plummer, J. Appl. Phys.
62, 1195 (1987).
"Point Defect Generation during the Oxidation of Silicon
in Dry Oxygen. II.
Comparison to Experiment,"
S.T. Dunham and J.D. Plummer, J. Appl. Phys.
57, 2551 (1986).
"Point Defect Generation during the Oxidation of Silicon
in Dry Oxygen. I Theory,"
S.T. Dunham and J.D. Plummer, J. Appl. Phys.
57, 2541 (1986).
"Modeling of Transient Enhanced Diffusion Based on Evolution of {311}
Defects," Alp H. Gencer and S.T. Dunham,
to appear in Process Physics
and Modeling in Semiconductor Technology, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996).
"Modeling of SiO2 Stress Relaxation and Stress Dependent Oxidation,"
Mitra Navi and S.T. Dunham,
to appear in Process Physics
and Modeling in Semiconductor Technology, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996).
"Interactions of Point Defects with Boron and Arsenic Precipitates,"
I. Clejan and S.T. Dunham,
to appear in Process Physics
and Modeling in Semiconductor Technology, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996).
"Models and Parameters for the Coupled Difusion of Dopants and
Point Defects in Silicon,"
S.T. Dunham and F.P. Wittel,
to appear in Process Physics
and Modeling in Semiconductor Technology, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996).
"Two Stream Model for Dopant Diffusion in Polysilicon Incrorporating
Effects of Grain Growth,"
S. Banerjee and S.T. Dunham,
to appear in Process Physics
and Modeling in Semiconductor Technology, G.R. Srinivasan,
C.S. Murthy and S.T. Dunham, eds., (Electrochem. Soc. Proc.,
Pennington, NJ 1996).
"Normal and Transient-Enhanced Diffusion of Boron as a Function of
Background Doping Level,"
F.P. Wittel and S.T. Dunham, unpublished.
"Lattice Monte-Carlo Simulations of
Vacancy-Mediated Diffusion and Implications for Continuum Models of
Coupled Diffusion," S.T. Dunham and C.D. Wu, in
Simulation of Semiconductor Devices and Processes
(SISDEP/SISPAD'95), H. Ryssel, ed.
"Spatial Variations in Point Defect
Concentrations and Their Impact on Submicron Device Structures,"
S.T. Dunham and A.M. Agarwal, in ULSI Science and Technology,
E.M. Middlesworth and H.Z. Massoud, eds. (Electrochem. Soc. Proc.,
Pennington, NJ, 1995).
"Erbium in Silicon: a Defect System for Optoelectronic Integrated
Circuits," J. Michel, J. Palm, F. Gan, F.Y.G. Ren, B. Zheng,
S.T. Dunham, and L.C. Kimerling, in Proceedings of 18th
International Conference on Defects in Semiconductors (ICDS-18),
Mater. Sci. Forum Vol. 196-201, pt.2, pp. 585-90 (1995).
"Computationally Efficient Model for Dopant
Precipitation Kinetics," I. Clejan and S.T. Dunham, in ULSI
Science and Technology, E.M. Middlesworth and H.Z. Massoud,
eds. (Electrochem. Soc. Proc., Pennington, NJ, 1995).
"Er-O and Er-F Reactions in Silicon" F.Y.G. Ren, S.T. Dunham,
J. Michels, B. Zheng, L. Giovane, L.C. Kimerling, in Proceeding of
the 36th Electronic Materials Conference(TMS, Warrendale, PA,
1994).
"Atomistic Models of Vacancy-Mediated
Dopant Diffusion in Silicon at High Doping Levels,"
S.T. Dunham and C.D. Wu, in NUPAD '94(IEEE, Piscataway, NJ, 1994)
pp. 101-104.
"Kinetics of Dopant Precipitation in Silicon,"
S.T. Dunham, in Silicon Materials Science & Technology H. Huff,
W. Bergholz, and K. Sumino, eds.(Electrochem. Soc. Proc., Pennington,
NJ 1994) pp 711-719.
"Modeling of Dopant Diffusion during Annealing of Sub-Amorphizing
Implants,"
S.T. Dunham, in Materials Synthesis and Processing Using Ion Beams,
R.J. Culbertson, O.W. Holland, K.S. Jones, and K Maex, eds.
(Mat. Res. Soc. Proc., Pittsburgh, PA, 1994), pp. 197-204.
"Consistent Quantitative Models for the Coupled Diffusion of Dopants and
Point Defects in Silicon,"
S.T. Dunham, in 1993 International Workshop on VLSI Process and
Device Modeling (VPAD 1993), K. Asada, ed (Japan, 1993) pp. 46-49.
"Improved Analysis of Spreading Resistance Measurements"
S.T. Dunham, N. Collins, and N. Jeng, in Measurement and
Characterization of Ultra-Shallow Doping Profiles in Semiconductors,
R. Subrahmanyan, C. Osburn, and P. Rai-Choudhury, eds. (MCNC, Research
Triangle Park, NC, 1993) pp. 44-53.
"Models for the Physical Extent of Point Defect Interactions in Silicon,"
A.M. Agarwal and S.T. Dunham, in Process Physics and Modeling in
Semiconductor Technology, G.R. Srinivasan, K. Taniguchi, and
C.S. Murthy, eds. (Electrochem. Soc. Proc. 93-6, Pennington, NJ,
1993) pp. 149-158.
"Dopant Diffusion in Polysilicon,"
M. Matsuoka and S.T. Dunham, in Process Physics and
Modeling Semiconductor Technology,G.R. Srinivasan, K. Taniguchi, and
C.S. Murthy, eds. (Electrochem. Soc. Proc. 93-6, Pennington, NJ,
1993) pp. 88-97
"Modeling of Phosphorus Diffusion in Silicon,"
S.T. Dunham, in Process Physics and Modeling Semiconductor Technology
G.R. Srinivasan, K. Taniguchi, and C.S. Murthy, eds.
(Electrochem. Soc. Proc. 93-6, Pennington, NJ, 1993) pp. 88-97
"Modeling of the Coupled Diffusion of Phosphoruswith Point Defects,"
S.T. Dunham, in Role of Point Defects/Defect Complexes in Silicon
Device Fabrication B. Sapori, ed. (NREL, 1992).
"Damage of Si-Crystal during Implantation by Low Energy Ions,"
Y. Levin, N. Herbots, and S.T. Dunham in Defect Engineering in
Semiconductor Growth, Processing and Device Technology, S. Ashok,
J. Chevakkier, K. Sumino, and E.R. Weber, eds. (Mat. Res. Soc. Proc.,
Pittsburgh, PA 1992), pp. 1037-42.
"Determination of Silicon Point Defect Properties using Buried Layers
and Membranes,"
S.T. Dunham, A. Agarwal, and N. Jeng, in Process Physics and
Modeling Semiconductor Technology, G.R. Srinivasan, J. Plummer,
and S. Pantelides eds. (Electrochem. Soc. Proc. 91-4, Pennington,
NJ, 1990) pp. 516-528.
"Point Defect Models forHigh Concentration Phosphorus Diffusion,"
S.T. Dunham, and R.A. Meade, in Process Physics and Modeling Semiconductor
Technology, G.R. Srinivasan, J. Plummer, and S. Pantelides
eds. (Electrochem. Soc. Proc. 91-4, Pennington, NJ, 1990) pp. 287-303.
"Measurements of Enhanced Diffusion of Buried Layers in Silicon Membranes
during Oxidation,"
S.T. Dunham, A.M. Agarwal, and N. Jeng, in Impurities, Defects and
Diffusion in
Semiconductors, J. Bernholc, E.E. Haller, and D.J. Wolford, eds.
(Mater. Res. Soc.
Proc. 163, Pittsburgh, PA, 1990) pp. 543-548.
"Behavior of Interstitials Near Non-Oxidizing Si-SiO2 Interfaces,"
S.T. Dunham, in Ultra Large Scale Integration Science and Technology,
C.M. Osburn and J. Andrews, eds. (Electrochem. Soc. Proc. 89-9,
Pennington, NJ, 1989).
"Interstitial Fluxes during Silicon Oxidation,"
S.T. Dunham, in Physics and Chemistry of SiO2 and Si-SiO2 Interface,
C.R. Helms and B.E. Deal eds. (Plenum, New York, NY 1988) pp. 477-484.
"The Effects of the Interface Roughness on Ellipsometric Measurements
of Thin Oxides,"
S.T. Dunham and B. Agrawal, in SiO2 and Its Interfaces,
G. Lucovsky and S. Pantelides, eds. (Mater. Res. Soc. Proc. 105,
Pittsburgh, PA 1988) pp 301-305.
"Point Defect Generation during Oxidation of Silicon in Dry Oxygen,"
Scott T. Dunham, Ph.D. Thesis, Stanford University, 1985
"Studies of Nucleation for the Freezing Transition in Models of
Simple Fluids,"
Dr. Iuval Clejan, Ph.D. Thesis, Boston University
"Oxidation of Silicon in Chlorine Containing Ambients,"
Mitra Navi, Masters Thesis, Boston University 1993
"Monte Carlo Lattice Simulations of Vacancy-Mediated Diffusion
in Silicon,"
Can-Dong Wu, Masters Thesis, Boston University 1994
"The Spatial Extent of Point Defects in Silicon:
Experiments and Modeling,"
Dr. Anuradha M. Agarwal, Ph.D. Thesis, Boston University 1994
"Development and Characterization of Process Simulation Models for
Diffusion and Co-Diffusion of Dopants in Silicon,"
Dr. Frederick P. Wittel, Ph.D. Thesis, Boston University 1995
Scott Dunham, Nov. 1995
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